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Part #: NE321000
OtherPart Category:RF Small Signal Field-Effect Transistors
Manufacturer:NEC COMPOUND SEMICONDUCTOR DEVICES LTD
Description:RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Hetero-junction FET
NE321000 SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 3.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.0150000000000000 |
| FET Technology | HETERO-JUNCTION |
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