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Part #: NE1280100
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:NEC ELECTRONICS CORP
Description:RF Power Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Hetero-junction FET
NE1280100 SPECIFICATIONS
| Status | Transferred |
| Additional Feature | HIGH RELIABILITY |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 10.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.3000000000000000 |
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