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NE1280100 Datasheet - RENESAS ELECTRONICS CORP - Datasheets360.comPart #: NE1280100
ObsoletePart Category:RF Power Field-Effect Transistors
Manufacturer:RENESAS ELECTRONICS CORP
Description:RF Power Field-Effect Transistor, 1-Element, K Band, N-Channel
NE1280100 SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | HIGH RELIABILITY |
| DS Breakdown Voltage-Min (V) | 10.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.3000000000000000 |
| FET Technology | HETERO-JUNCTION |
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