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Part #: NDS9957
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NATIONAL SEMICONDUCTOR CORP
Description:Power Field-Effect Transistor, 2.6A I(D), 60V, 0.16ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
NDS9957 SPECIFICATIONS
| Status | Transferred |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.6000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.1600000000000000 |
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