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Part #: MXP120A080FL-GE3
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:VISHAY INTERTECHNOLOGY INC
Description:Power Field-Effect Transistor, 29A I(D), 1200V, 0.119ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD
MXP120A080FL-GE3 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 1200.0000000000000000 |
| Drain Current-Max (ID) (A) | 29.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.1190000000000000 |
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