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MSCSM70VM10C4AG Datasheet - MICROCHIP TECHNOLOGY INC - Datasheets360.comPart #: MSCSM70VM10C4AG
ActivePart Category:Power Field-Effect Transistors
Manufacturer:MICROCHIP TECHNOLOGY INC
Description:Power Field-Effect Transistor, 238A I(D), 700V, 0.0095ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
MSCSM70VM10C4AG SPECIFICATIONS
| Status | Active |
| Case Connection | ISOLATED |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND SCR |
| DS Breakdown Voltage-Min (V) | 700.0000000000000000 |
| Drain Current-Max (ID) (A) | 238.0000000000000000 |
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