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Part #: MSAFA1N100P3
OtherPart Category:Power Field-Effect Transistors
Manufacturer:MICROSEMI CORP
Description:Power Field-Effect Transistor, 1A I(D), 1000V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MSAFA1N100P3 SPECIFICATIONS
| Status | Transferred |
| Additional Feature | AVALANCHE RATED, LOW LEAKAGE CURRENT |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 1000.0000000000000000 |
| Drain Current-Max (ID) (A) | 1.0000000000000000 |
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