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Part #: MS4600
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:MICROSEMI CORP
Description:RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
MS4600 SPECIFICATIONS
| Status | Transferred |
| Case Connection | DRAIN |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 125.0000000000000000 |
| Drain Current-Max (ID) (A) | 40.0000000000000000 |
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