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Part #: MMRF1050HR6
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:NXP SEMICONDUCTORS
Description:RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
MMRF1050HR6 SPECIFICATIONS
| Status | Unknown |
| Additional Feature | ESD PROTECTED |
| Case Connection | SOURCE |
| Configuration | SEPARATE, 2 ELEMENTS |
| DS Breakdown Voltage-Min (V) | 105.0000000000000000 |
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