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Part #: MMDF3N04HDR2G
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:ONSEMI
Description:Power Field-Effect Transistor, 3.4A I(D), 40V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MMDF3N04HDR2G SPECIFICATIONS
| Status | Discontinued |
| Avalanche Energy Rating (Eas) (mJ) | 162.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 40.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.4000000000000000 |
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Equivalent Parts: Part #MMDF3N04HDR2G
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