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MLD1N06CLT4 Datasheet - MOTOROLA INC - Datasheets360.comPart #: MLD1N06CLT4
OtherPart Category:Power Field-Effect Transistors
Manufacturer:MOTOROLA INC
Description:Power Field-Effect Transistor, 1A I(D), 59V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MLD1N06CLT4 SPECIFICATIONS
| Status | Transferred |
| Additional Feature | LOGIC LEVEL COMPATIBLE, ESD PROTECTED |
| Avalanche Energy Rating (Eas) (mJ) | 80.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR |
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