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Part #: MGFC36V5867
ObsoletePart Category:RF Power Field-Effect Transistors
Manufacturer:MITSUBISHI ELECTRIC CORP
Description:RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
MGFC36V5867 SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | HIGH RELIABILITY |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 10.0000000000000000 |
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