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Part #: MG800FXF2YMS3(DAE1
ActivePart Category:Power Field-Effect Transistors
Manufacturer:TOSHIBA CORP
Description:Power Field-Effect Transistor, 800A I(D), 3300V, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
MG800FXF2YMS3(DAE1 SPECIFICATIONS
| Status | Active |
| Case Connection | ISOLATED |
| Configuration | COMPLEX |
| DS Breakdown Voltage-Min (V) | 3300 |
| Drain Current-Max (ID) (A) | 800 |
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