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Part #: MG800FXF1JMS3
ActivePart Category:Power Field-Effect Transistors
Manufacturer:TOSHIBA CORP
Description:Power Field-Effect Transistor, 800A I(D), 3300V, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
MG800FXF1JMS3 SPECIFICATIONS
| Status | Active |
| Configuration | COMPLEX |
| DS Breakdown Voltage-Min (V) | 3300.0000000000000000 |
| Drain Current-Max (ID) (A) | 800.0000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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