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Part #: MG250V2YMS3
ActivePart Category:Power Field-Effect Transistors
Manufacturer:TOSHIBA CORP
Description:Power Field-Effect Transistor, 250A I(D), 1700V, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
MG250V2YMS3 SPECIFICATIONS
| Status | Active |
| Case Connection | ISOLATED |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
| DS Breakdown Voltage-Min (V) | 1700.0000000000000000 |
| Drain Current-Max (ID) (A) | 250.0000000000000000 |
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