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Part #: MG10G6EM1
ActivePart Category:Power Field-Effect Transistors
Manufacturer:TOSHIBA CORP
Description:Power Field-Effect Transistor, 10A I(D), N-Channel, Metal-oxide Semiconductor FET
MG10G6EM1 SPECIFICATIONS
| Status | Active |
| Case Connection | ISOLATED |
| Configuration | COMPLEX |
| DS Breakdown Voltage-Min (V) | 450 |
| Drain Current-Max (ID) (A) | 10.0000000000000000 |
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