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Part #: MG031E120004A
ActivePart Category:Power Field-Effect Transistors
Manufacturer:SHINDENGEN ELECTRIC MANUFACTURING CO LTD
Description:Power Field-Effect Transistor, 120A I(D), 40V, 0.0031ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MG031E120004A SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 185.0000000000000000 |
| Configuration | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 40.0000000000000000 |
| Drain Current-Max (ID) (A) | 120.0000000000000000 |
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