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Part #: MDP5N50TH
ActivePart Category:Power Field-Effect Transistors
Manufacturer:MAGNACHIP SEMICONDUCTOR LTD
Description:Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MDP5N50TH SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 230.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 500.0000000000000000 |
| Drain Current-Max (ID) (A) | 5.0000000000000000 |
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