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Part #: MDP14N050TH
ActivePart Category:Power Field-Effect Transistors
Manufacturer:MAGNACHIP SEMICONDUCTOR LTD
Description:Power Field-Effect Transistor, 120A I(D), 135V, 0.005ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-220AB
MDP14N050TH SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 450.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 135.0000000000000000 |
| Drain Current-Max (ID) (A) | 120.0000000000000000 |
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