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MBG40H-2 Datasheet - TELEDYNE TECHNOLOGIES INC - Datasheets360.comPart #: MBG40H-2
ActivePart Category:Power Field-Effect Transistors
Manufacturer:TELEDYNE TECHNOLOGIES INC
Description:Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258
MBG40H-2 SPECIFICATIONS
| Status | Active |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) (mJ) | 280.0000000000000000 |
| Configuration | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 1000.0000000000000000 |
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