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LV6N03 Datasheet - LITE-ON SEMICONDUCTOR CORP - Datasheets360.comPart #: LV6N03
OtherPart Category:Power Field-Effect Transistors
Manufacturer:LITE-ON SEMICONDUCTOR CORP
Description:Power Field-Effect Transistor, 16A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
LV6N03 SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain Current-Max (ID) (A) | 16.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0060000000000000 |
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