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Part #: LTV3C10
OtherPart Category:Power Field-Effect Transistors
Manufacturer:LITE-ON SEMICONDUCTOR CORP
Description:Power Field-Effect Transistor, 3.3A I(D), 100V, 0.115ohm, 2-Element, N-Channel, Silicon, Trench Mosfet FET
LTV3C10 SPECIFICATIONS
| Status | Transferred |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.3000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.1150000000000000 |
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