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Part #: LTD11P10
OtherPart Category:Power Field-Effect Transistors
Manufacturer:LITE-ON SEMICONDUCTOR CORP
Description:Power Field-Effect Transistor, 11A I(D), 100V, 0.195ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET, TO-252
LTD11P10 SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 11.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.1950000000000000 |
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