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Part #: LSC11N65E
OtherPart Category:Power Field-Effect Transistors
Manufacturer:XIAN LONTEN RENEWABLE ENERGY TECHNOLOGY INC
Description:Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
LSC11N65E SPECIFICATIONS
| Status | Contact Mfr |
| Avalanche Energy Rating (Eas) (mJ) | 210.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
| Drain Current-Max (ID) (A) | 11.0000000000000000 |
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Equivalent Parts: Part #LSC11N65E
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