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Part #: LMG3616REQR
ActivePart Category:Power Field-Effect Transistors
Manufacturer:TEXAS INSTRUMENTS INC
Description:Power Field-Effect Transistor, 3.2A I(D), 650V, 1-Element, N-Channel, Gallium Nitride, Junction FET
LMG3616REQR SPECIFICATIONS
| Status | Active |
| Configuration | COMPLEX |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.2000000000000000 |
| FET Technology | JUNCTION |
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