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L2N7002FLT3G Datasheet - LESHAN RADIO CO LTD - Datasheets360.comPart #: L2N7002FLT3G
ActivePart Category:Small Signal Field-Effect Transistors
Manufacturer:LESHAN RADIO CO LTD
Description:Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
L2N7002FLT3G SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 8.0000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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