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Part #: L125
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:POLYFET R F DEVICES
Description:RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
L125 SPECIFICATIONS
| Status | Contact Mfr |
| Additional Feature | LOW NOISE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 70.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.0000000000000000 |
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