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K4B2G1646E-BIH90 Datasheet - SAMSUNG SEMICONDUCTOR INC - Datasheets360.comPart #: K4B2G1646E-BIH90
ObsoletePart Category:DRAMs
Manufacturer:SAMSUNG SEMICONDUCTOR INC
Description:DDR3 DRAM, 128MX16, 0.255ns, CMOS, PBGA96
K4B2G1646E-BIH90 SPECIFICATIONS
| Status | Discontinued |
| Access Time-Max (ns) | 0.2550000000000000 |
| Clock Frequency-Max (MHz) | 667.00000 |
| I/O Type | COMMON |
| Interleaved Burst Length | 8 |
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