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Part #: JAN2N6802
ActivePart Category:Power Field-Effect Transistors
Manufacturer:DEFENSE LOGISTICS AGENCY
Description:Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
JAN2N6802 SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 500.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.5000000000000000 |
| Drain-source On Resistance-Max (ohm) | 1.5000000000000000 |
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Equivalent Parts: Part #JAN2N6802
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