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JAN2N4861 Datasheet - NEW ENGLAND SEMICONDUCTOR - Datasheets360.comPart #: JAN2N4861
OtherPart Category:Small Signal Field-Effect Transistors
Manufacturer:NEW ENGLAND SEMICONDUCTOR
Description:Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AA
JAN2N4861 SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 60.0000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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