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Part #: IXTY01N100D
OtherPart Category:Power Field-Effect Transistors
Manufacturer:IXYS CORP
Description:Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IXTY01N100D SPECIFICATIONS
| Status | Transferred |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 1000.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.1000000000000000 |
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