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Part #: IXTH02N250
OtherPart Category:Power Field-Effect Transistors
Manufacturer:IXYS CORP
Description:Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
IXTH02N250 SPECIFICATIONS
| Status | Transferred |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 2500.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.2000000000000000 |
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