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Part #: IXTD5N100A
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:SILICON TRANSISTOR CORP
Description:Power Field-Effect Transistor, 6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IXTD5N100A SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 1000.0000000000000000 |
| Drain Current-Max (ID) (A) | 6.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 2.0000000000000000 |
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IXTD5N100A Datasheet & Equivalents - SILICON TRANSISTOR CORP - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #IXTD5N100A
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