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Part #: IXTD10N100
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:SILICON TRANSISTOR CORP
Description:Power Field-Effect Transistor, 8.5A I(D), 1000V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IXTD10N100 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 1000.0000000000000000 |
| Drain Current-Max (ID) (A) | 8.5000000000000000 |
| Drain-source On Resistance-Max (ohm) | 1.3000000000000000 |
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Equivalent Parts: Part #IXTD10N100
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