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Part #: IXFA6N120P
OtherPart Category:Power Field-Effect Transistors
Manufacturer:IXYS CORP
Description:Power Field-Effect Transistor, 6A I(D), 1200V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA
IXFA6N120P SPECIFICATIONS
| Status | Transferred |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) (mJ) | 300.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
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