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Part #: IXCY01N90E
OtherPart Category:Power Field-Effect Transistors
Manufacturer:LITTELFUSE INC
Description:Power Field-Effect Transistor, 900V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IXCY01N90E SPECIFICATIONS
| Status | Unknown |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| DS Breakdown Voltage-Min (V) | 900.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0800000000000000 |
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