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Part #: IRLU210A
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:SAMSUNG SEMICONDUCTOR INC
Description:Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IRLU210A SPECIFICATIONS
| Status | Discontinued |
| Avalanche Energy Rating (Eas) (mJ) | 24.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 200.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.7000000000000000 |
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IRLU210A Datasheet & Equivalents - SAMSUNG SEMICONDUCTOR INC - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #IRLU210A
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