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Part #: IRLS620A
OtherPart Category:Power Field-Effect Transistors
Manufacturer:SAMSUNG SEMICONDUCTOR INC
Description:Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IRLS620A SPECIFICATIONS
| Status | Transferred |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Avalanche Energy Rating (Eas) (mJ) | 33.0000000000000000 |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
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