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Part #: IRLML6401TR
OtherPart Category:Power Field-Effect Transistors
Manufacturer:SHENZHEN CHANGYUNTONG IC DESIGN CO LTD
Description:Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
IRLML6401TR SPECIFICATIONS
| Status | Contact Mfr |
| Additional Feature | HIGH RELIABILITY |
| Avalanche Energy Rating (Eas) (mJ) | 33.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 12.0000000000000000 |
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Equivalent Parts: Part #IRLML6401TR
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