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Part #: IRLML2502GPBF
OtherPart Category:Power Field-Effect Transistors
Manufacturer:INTERNATIONAL RECTIFIER CORP
Description:Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
IRLML2502GPBF SPECIFICATIONS
| Status | Transferred |
| Additional Feature | HIGH RELIABILITY |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.2000000000000000 |
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