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Part #: IRHQ58110
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 4.6A I(D), 100V, 0.31ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IRHQ58110 SPECIFICATIONS
| Status | Discontinued |
| Avalanche Energy Rating (Eas) (mJ) | 47.0000000000000000 |
| Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.6000000000000000 |
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IRHQ58110 Datasheet - INFINEON TECHNOLOGIES AG - Datasheets360.com