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Part #: IRFY430EPBF
OtherPart Category:Power Field-Effect Transistors
Manufacturer:INTERNATIONAL RECTIFIER CORP
Description:Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
IRFY430EPBF SPECIFICATIONS
| Status | Transferred |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 500.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.7000000000000000 |
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