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Part #: IRFS831
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:SAMSUNG SEMICONDUCTOR INC
Description:Power Field-Effect Transistor, 3.1A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IRFS831 SPECIFICATIONS
| Status | Discontinued |
| Avalanche Energy Rating (Eas) (mJ) | 124.0000000000000000 |
| Case Connection | ISOLATED |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 450.0000000000000000 |
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