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Part #: IRFS541
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:SAMSUNG SEMICONDUCTOR INC
Description:Power Field-Effect Transistor, 17A I(D), 80V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IRFS541 SPECIFICATIONS
| Status | Discontinued |
| Case Connection | ISOLATED |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 80.0000000000000000 |
| Drain Current-Max (ID) (A) | 17.0000000000000000 |
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IRFS541 Datasheet & Equivalents - SAMSUNG SEMICONDUCTOR INC - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #IRFS541
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