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Part #: IRFS250
OtherPart Category:Power Field-Effect Transistors
Manufacturer:SAMSUNG SEMICONDUCTOR INC
Description:Power Field-Effect Transistor, 20.7A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IRFS250 SPECIFICATIONS
| Status | Transferred |
| Case Connection | ISOLATED |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 200.0000000000000000 |
| Drain Current-Max (ID) (A) | 20.7000000000000000 |
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