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Part #: IRFR210
OtherPart Category:Power Field-Effect Transistors
Manufacturer:SAMSUNG SEMICONDUCTOR INC
Description:Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IRFR210 SPECIFICATIONS
| Status | Transferred |
| Avalanche Energy Rating (Eas) (mJ) | 31.0000000000000000 |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 200.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.7000000000000000 |
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