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Part #: IRFM014
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:SAMSUNG SEMICONDUCTOR INC
Description:Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IRFM014 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.7000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.2000000000000000 |
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