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Part #: IRFG5210
OtherPart Category:Power Field-Effect Transistors
Manufacturer:INTERNATIONAL RECTIFIER CORP
Description:Power Field-Effect Transistor, 0.68A I(D), 200V, 1.83ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB
IRFG5210 SPECIFICATIONS
| Status | Transferred |
| Additional Feature | HIGH RELIABILITY |
| Avalanche Energy Rating (Eas) (mJ) | 64.0000000000000000 |
| Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 200.0000000000000000 |
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