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Part #: IRFF312
OtherPart Category:Power Field-Effect Transistors
Manufacturer:HARRIS SEMICONDUCTOR
Description:Power Field-Effect Transistor, 1.15A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
IRFF312 SPECIFICATIONS
| Status | Transferred |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 400.0000000000000000 |
| Drain Current-Max (ID) (A) | 1.1500000000000000 |
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