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Part #: IRFE430E4
OtherPart Category:Power Field-Effect Transistors
Manufacturer:TT ELECTRONICS PLC
Description:Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET
IRFE430E4 SPECIFICATIONS
| Status | Unknown |
| DS Breakdown Voltage-Min (V) | 500.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.5000000000000000 |
| Drain-source On Resistance-Max (ohm) | 1.7250000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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Equivalent Parts: Part #IRFE430E4
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